Laser Diodes & Modules

LASER DIODES	The division for semiconductor lasers was founded at POLYUS Research & Development Institute not longer before achieving the effect of stimulated emission generation by the p - n junction in Ga As. The main efforts are focused in following applications: laser pointers fiberoptic communications pumping of solid-state lasers laser medical therapeutic systems scientific research.

		Today POLYUS Research & Development Institute produced over 40 models of laser diodes emitting in range of 635 to 1550 nm.

CW Laser Diodes

Typical Characteristics (T=25°C)

Visible Laser Diodes MOCVD AlGaInP Quantum Well Types
Model	Wavelength, nm	Output power, mW	Operating current, mA	Operating voltage, V	Threshold current, mA	Beam divergence, deg.	Spectral width (FWHM), nm	Stripe width, µm
IDL5S-640	635...640	5	50	2.3	40	10 x 35	2.0	5
IDL10S-650	645...660	10	60	2.4	35	10 x 30	2.0	5
IDL15S-670	660...680	15	55	2.3	35	10 x 30	2.0	5
IDL20M-635	630...640	20	160	2.5	160	8 x 30	2.0	12
IIDL30M-670	660...680	30	160	2.4	90	8 x 30	2.0	12
IDL50M-670	660...680	50	200	2.5	100	10 x 35	2.0	15
IDL100M-670	670...690	100	260	2.5	100	10 x 35	2.0	30
IDL250M-670	670...680	250	500	2.5	300	10 x 35	2.0	100
IDL250M-680	680...690	250	500	2.5	300	10 x 35	2.0	100
Single Mode Infrared Laser Diodes MOCVD GaAlAs Quantum Well Types
IDL5S-760	755...765	5	75	2.2	55	10 x 35	1.5	3
IDL10S-770	770...780	10	80	2.2	45	8 x 30	1.5	3
IDL100S-780	770...790	100	180	2.2	55	8 x 30	1.5	3
IDL50S-810	800...820	50	130	2.2	3	10 x 40	1.5	30
IDL100S- 810	800...820	100	160	2.2	3	10 x 35	1.5	30
IDL50S-830	820...840	50	120	2.2	25	10 x 30	1.5	3
IDL100S-830	820...840	100	160	2.2	35	10 x 35	1.5	3
IDL50S-850	840...870	50	150	2.2	40	10 x 35	1.5	3
IDL100S-850	840...880	100	160	2.2	35	10 x 35	1.5	3
IDL50S-875	860...880	50	130	2.1	30	10 x 30	1.5	3
IDL50S-900	870...910	50	180	2.2	40	10 x 30	1.5	3
IDL50S-915	910...920	50	80	2.2	30	10 x 30	1.5	3
IDL100S-920	915...925	100	170	2.2	35	10 x 30	1.5	3
MOCVD InGaAs Quantum Well Types
IDL50S-980	960...990	50	130	2.3	35	10 x 30	3.0	3
IDL100S-980	960...990	100	210	2.4	40	10 x 30	3.0	3
MOCVD InGaAsP Types
IDL5S-1300	1270...1330	5	50	1.5	30	20 x 35	3.0	2.5
IDL10S-1300	1270...1330	10	75	1.8	30	20 x 35	3.0	2.5
IDL15S-1300	1270...1330	15	100	2.0	30	20 x 35	3.0	2.5
IDL20S-1300	1270...1330	20	95	1.6	20	20 x 35	3.0	3.5
IDL30S-1300	1270...1330	30	120	1.75	20	20 x 35	3.0	3.5
IDL40S-1300	1270...1330	40	180	2.1	25	20 x 35	3.0	4.0
IDL50S-1300	1270...1330	50	200	2.3	25	20 x 35	3.0	4.0
IDL100M-1300	1270...1330	100	350	3.5	50	20 x 35	3.5	6.0
IDL30S-1550		30	150	2.0	25	20 x 35	3.0	4.0
IDL100M-1550		100	400	2.4	50	20 x 35	3.5	6.0

LD-1060, LD-1460, LD-1650 Laser Diodes

LD-1060, LD-1460, LD-1650 Series of devices are quantum well structure fabricated MOCVD technique in (1060…1650) nm spectral range. Low threshold current and high slope efficiency contribute to low operating currents, enhancing reliability. LD light source is a CW injection semiconductor laser with built-in monitor photodiode to stabilize output power. The laser light source is required the application in various optoelectronic systems and high-resolution spectroscopy.

Specifications (T = 25 °C)

Characteristics	LD-1060	LD-1460	LD-1650
Optical output power, mW	10	5	5
Wavelength, nm	1060	1460	1650
Emitting area, µm x µm		3x1.5
Threshold current, mA	10	40	40
Forward current, mA	50	60	70
Forward voltage, V	2.0	2.0	2.0
Beam Divergence perpendicular, Degree	40	40	40
Beam Divergence parallel, Degree	10	10	10
Static alignment, Degree	<±3	<±3	<±3
Positional accuracy, Degree	±100	±100	±100
Spectral width (FWHM), nm	2.0	2.0	2.0
Mode structure	Single Mode
Differential Efficiency, mW/mA	0.2	0.2	0.2
Monitoring Output Current, mA	<0.04	<0.04	<0.04

Additional
- external quantum efficiency : not less than 20 %;
- wavelength drift under temperature change : not more than 4 A/°C;
- threshold current drift under temperature change : not more that 1.0 %/°C;
- thermal resistance : not more than 10 °C/W;
- operating temperature range : -60 °C...+60 °C;
- monitor PD operating voltage : (5±0.5) V
- astigmatism : not more 25 µm

MOCVD AlGaAs and InGaAs
Quantum Well High Power Laser Diodes

Typical Characteristics (T=25°C)

Model	Wavelength, nm	Output power, mW	Operating current, mA	Operating voltage, V	Threshold current, mA	Beam divergence, deg.	Spectral width (FWHM), nm	Stripe width, µm
IDL100M-808	805...811	100	300	2.2	180	8 x 30	3	100
IDL250M-808	805...811	250	450	2.0	180	12 x 35	3	80
IDL500M-808	805...811	500	900	2.0	230	12 x 35	3	120
IDL1000M-808	805...811	1000	1400	2.2	350	8 x 30	3	100
IDL200M-830	820...840	200	450	2.2	180	12 x 35	3	30
IDL250M-850	830...870	250	450	2.0	180	12 x 35	3	80
IDL500M-980	960...990	500	800	1.8	150	12 x 32	10	50
IDL1000M-980	960...990	1000	1500	1.9	200	12 x 32	10	100
IDL500M-1020	990...1040	500	900	1.9	200	12 x 32	10	100
IDL1000M-1020	990...1040	1000	1700	2.0	250	12 x 32	10	100

IDL120M-915

905...925

120

180

2.4

10 x 35

3x1,5

Pulsed Laser Diode Arrays

Specifications (T = 25 °C)

Multimode MOCVD InGaAs/GaAs Quantum Well Types of IDLP-810 Series at 800 ... 820 nm
Model	Output power, W	Pulse repetition rate, Hz	Pulse duration, ns	Forward current, A	Forward voltage, V	Beam divergence, deg.	Spectral width (FWHM), nm	Emitting area, mm	Position accuracy, µm
IDLP50M-810	50	10000	100	22	26	25x10	3	0,4x0,4	±500
IDLP100M-810	100	10000	100	40	20	25x10	3	0,8x0,3	±500
IDLP200M-810	200	5000	100	40	50	25x10	3	0,8x0,8	±500
IDLP500M-810	500	5000	100	60	50	25x10	3	1,4x1,4	±500
Multimode MOCVD InGaAs/GaAs Quantum Well Types of IDLP-905 Series at 900 ... 910 nm
IDLP50M-905	50	10000	100	22	26	40x12	3	0,4x0,4	±500
IDLP100M-905	100	10000	100	40	20	40x12	3	0,8x0,3	±500
IDLP200M-905	200	5000	100	40	50	40x12	3	0,8x0,8	±500
IDLP500M-905	500	5000	100	60	50	40x12	3	1,4x1,4	±500

Pulsed Semiconductor Lasers

Specifications (T = 25 °C)

LPI-805 Series at 800 ... 810 nm
Model	Output power, W	Pulse repetition rate, Hz	Pulse duration, ns	Forward current, A	Forward voltage, V	Beam divergence, deg.	Spectral width (FWHM), nm	Emitting area, mm	Position accuracy, µm
LPI-50M-805	50	1000 ... 5000	100	0,1	18	25x10	3	0,4x0,4	±500
LPI-100M-805	100	1000 ... 5000	100	0,2	18	25x10	3	0,4x0,4	±500
LPI-150M-805	150	1000 ... 5000	100	0,12	18	25x10	3	0,4x0,8	±500

MOCVD AlGaAs and InGaAsP Superluminescent Diode Modules

Typical Characteristics (T=25°C)

Model	Wavelength, nm	SM pigtail output power, mW	Operating current, mA	Operating voltage, V	Spectral width (FWHM), nm	Residual spectral modulation (ripple), %	Visibility subpeaks (reflectivity), dB
SLD-820	810...860	0.5	120	2.4	20	1.0	- 50
SLD-1300	1270...1330	0.4	300	2.0	30	2.0

Modules For Telecommunications

Laser Modules For Telecommunications

Model	Wavelength, nm	Output power, mW	Operating current, mA	Bitrate, Mbit/s	Spectral width (FWHM), nm	Threshold current, mA	Monitor current, mA
POM-14	1300	1.5...10.0	40...100	560	0.1...3.0	30	0.05...2.0
POM-17	1300	3.0...10.0	40...100	34	1.0...8.0	30	0.05...2.0
POM-18	1550	1.5	60	560	0.1...3.0	20	0.05...2.0
POM-355	805...855	35	180	34	0.1...2.0	30	0.1...2.0
POM-980	940...990	35	180	34	0.1...2.0	20	0.1...2.0
POM-354	805...870	100...700	950		1.0...5.0	270	1.0...2.0
POM-820	810...860	0.5	120	2	20		0.05...1.0

High-Frequency Laser Modules

Model	Wavelength, nm	Output power, mW	Operating current, mA	Modulation bandwidth, GHz	Spectral width (FWHM), nm	Relative intensity noise, dB/Hz	Monitor current, mA
POM-19	1300	4.0	85	6...10	5	-134	60
POM-19-1	1300	1.0	60	0.001...6	3	-130	20

1550 nm Semiconductor Optical Amplifier

Specifications (T = 25 °C)

Item	Test Conditions	MIN	TYP.	MAX
Wavelength, nm	CW, Gain=10 dB	1530	1550	1580
Operating voltage, V	CW, I_f=200 mA	-	-	2
Fiber-to-fiber gain, dB	CW, I_f=200 mA	8	10	-
Input sensitivity, dBm	CW, Gain=10 dB	-30	-	-
Laser bias current, mA	CW, Gain=10 dB	-	200	250
Polarization sensitivity, dB	CW, I_f=200 mA	-	3	-
Spectral width, nm	CW, I_f=200 mA	30	40	-

Operating temperature	-40...+60 °C
Thermo-chiller current	0,5 A
Thermistor resistance	15 kOhm

POM-21, POM-22, POM-23 FBG Laser Modules

Features:

CW or pulsed operation
Single longitudinal mode
Fiber Bragg grating
Output wavelength width <500 kHz
Build-in monitor InGaAsP photodiode
Hermetically sealed 14-pin DIL package

POM-21, POM-22 and POM-23 Fiber Bragg Grating Lasers Modules are 1060, 1300,1550 nm lasers modules with single longitudinal mode of operation. Thermoelectric cooler and thermistor are used to stabilize and control temperature. POM-21, POM-22, POM-23 Lasers Modules is used in fiberoptic sensors, fiberoptic lasers and amplifiers.

Specifications (T = 25 °C)

Wavelength, nm	1060	1300	1550
Spectral width, kHz	<500	<500	<500
Output power in fiber, mW	3…10	3…5	3…5
Threshold current, mA	10…30	30...60	30...60
Operating current, mA	60…120	100…150	100…150
Rise time, ns	< 0.5	< 0.5	< 0.5
Operating voltage, V	1.7	2.0	2.0
Monitor photocurrent, µA	> 40	> 40	> 40
Operating temperature, °C	-40…+60
Thermo-chiller current, A	0.5
Photodiode voltage, V	5.0
Thermistor resistance, kOhm	15

SPM LED Transmitting Modules

The SPM-50/50 M/50/ST transmitting modules based on highly efficient superluminescent LEDs are designed for use in digital fiberoptic data transmission systems with all code types as electrical pulse - optical pulse converters. The modules have an optical output with multimode (50/125 µm) or single-mode (9/125 µm ) fiberoptic cable with the optical connector of LIST-X, FC or ST-types or without it.
Features:

High radiation power (up to 10 mW)
Operates with all code types
Wide operating temperature range
High reliability
LED degradation control output

Specifications (T = 25 °C)

Model	Data rate, Mbps	Wavelength, µm	Output power, mW	Output signal levels	Output fiber types
SPM-50/50M-1	0…50	0.85	0.5 - 2.0	TTL	MM
SPM-50/50M-2			0.05 - 0.2		SM
SPM-50CT-1			1.0 - 10		MM
SPM-50CT-2			0.1 - 1.0		SM
SPM-50/50M-1	0…50	1.3 ; 1.5	0.02 - 0.1		MM
SPM-50/50M-2			0.01 - 0.02		SM
SPM-50CT-1			0.1 - 1.0		MM
SPM-50CT-2			0.05 - 0.2		SM

Operating temperature range	- 40…+55 °C
Supply voltage	+5 V
Consumption current	No more 300 mA
Time between failures	50,000 h

LPM Laser Transmitting Modules

The LPM laser transmitting modules are designed for use in digital fiberoptic data transmission systems with rates from 2 Mbps to 622 Mbps for codes of CMI type as electrical pulse - optical pulse converters. The modules have an optical output with multimode (50/125 µm) or single-mode (9/125 µm) fiberoptic cable with the optical connector of LIST-X, FC or ST-types or without it.

Features:

High radiation power (up to 70 mW)
Operates with balanced codes of the Manchester-2 type
Operating wavelength from 0.85 to 1.5 µm
Built-in power modulation and stabilization circuit
Laser degradation control output

Model	Data rate, Mbps	Wavelength, µm	Output power, mW	Output signal levels	Output fiber types
LPM-(2,8,34,155)M-1	0.5…2, 1…8, 8…34, 34…155	0.85	10…50	TTL, PECL	MM
LPM-(2,8,34,155)M-2			1…10		SM
LPM-(2,8,34,155)-1			10…50		MM
LPM-(2,8,34,155)-2			1…10		SM
LPM-(2,8,34,155)CT-1			10…70		MM
LPM-(2,8,34,155)CT-2			1…20		SM
LPM-(2,8,34,155,622)M-1	0.5…2, 1…8, 8…34, 34…155, 300…622	1.3; 1.55	0.1…2.0		MM
LPM-(2,8,34,155,622)M-2			0.1…1.0		SM
LPM-(2,8,34,155,622)-1			0.1…2.0		MM
LPM-(2,8,34,155)-2			1…10		SM
LPM-(2,8,34,155,622)CT-1			0.5…20		MM
LPM-(2,8,34,155,622)CT-2			0.5…20		SM

Operating temperature range	- 40…+55 °C
Supply voltage	+5 V
Time between failures	10,000 h (50,000 h for LPM-CT)

IOS Instrument Transmitting Modules

The optical signal sources (IOS) are designed for conversion of electrical signal to optical signals.

Features:

Connection to a standard generation with a 50-Ohm output is possible
Optical connection of the LIST-X type
Small dimensions

Specifications (T = 25 °C)

Model	Wavelength, µm	Output power with 50-mm fiber, mW	Transient characteristic steepness, ns	Pump current, mA
IOS-1	0.65	1	100	50
IOS-2	0.85	10	1.0	200
IOS-3	1.3	1	0.5	100
IOS-4	1.55	1	0.5	100

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tel:+7 095 3330389 fax:+7 095 3330256
e-mail: mail@polyus.msk.ru

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