Detectors

PHOTODIODES
AND RECEIVERS

POLYUS Research & Development Institute produces a several types of photodiodes and photoreceivers for varios applications including fiberoptic communications, laser rangefinding, spectral and measurement equipment.

InGaAs Pin Photodiodes (Vr=-5V, 25°C)

Model	Active diameter, µm	Responsivity		Dark current, nA	Total capacitance, pF	Response time, ns	Absolute Maximum Ratings
		1300 nm	1550 nm
		A/W
Chip Mounted On Flat Carrier
PD40/B	40	0.8	0.85	5	0.18	0.06	Reverse bias voltage 10 V Operating temperature -60...+55 °C
PD70/B	70	0.8	0.85	5	0.3	0.08
PD250/B	250	0.8	0.85	20	6.0	2.0
PD500/B	500	0.8	0.85	30	35	10.0
TO-18 Case With Glass Window
D250-P/B	250	0.7	0.75	20	6.0	2.0
D500-P/B	500	0.7	0.75	30	35	10
Pigtailed For Single Mode Or Multimode Operation
PD70-PT/B	70	0.8	0.85	5	0.8	0.15	Operating temperature -20...+55 °C

Ultrafast InGaAs Pin Photodetectors (Vr=-5V, 25°C)

Model	Active diameter, mm	Responsivity		Dark current, nA	Response time (FWHM), ps	Bandwidth, -3 dB, 50 W GHz	Absolute Maximum Ratings
		1300 nm	1550 nm
		A/W
PDM40	40	0.8	0.85	10	40	10	Reverse bias voltage 20 V Operating temperature 0...+55 °C
PDM70	70	0.8	0.85	10	75	5
PDM40GW	40	0.7	0.75	10	40	10
PDM70GW	70	0.7	0.85	10	75	5

Wideband Microwave InGaAs Pin Photodetectors (Vr=-10V, 25°C)

Model	Active diameter, µm	Responsivity		Dark current, nA	Frequency response flatness, dB	Bandwidth, -3 dB, 50 W GHz	Return optical loss, dB	Absolute Maximum Ratings
		1300 nm	1550 nm
		A/W
PDWM40	40	0.3*	0.35*	20	ą1.5	0.1...12	-45	Reverse bias voltage 20 V Operating temperature 0...+55 °C
PDMN40**	40	0.7	0.75	20	ą1.5***	7.5...9.5	-45	Reverse bias voltage 20 V Operating temperature 0...+55 °C

Note :
* due to internal matching 50 W resistor
** photodetector PDMN40 electrical output / module POM-19 electrical input transmission ratio -29 dB
*** within any 500 MHz in operating frequency band

Transimpedance PROM-D70 Series Pinfet Reciever Modules (25°C, 1000...1650 nm)

Bit Rate, MHz	Sensitivity, BER=10^-9, dBm	Dynamic Range, dB	Responsivity, A/W	Supply Voltage, V	PD Bias, V	Operating Temperature, °C
18	50	24	0.65	ą5	-3.5	-40...+50
30	43	24	0.65	ą5	-3.5	-40...+50
90	37	24	0.65	ą5	-3.5	-40...+50
18	50	24	0.65	ą5	-3.5	-40...+50

FDG Germanium Photodiodes with Thermoelectric Cooler

Features:

High sensitivity at 1500 nm
Wide operating spectral range from 500 to 1600 nm
Low noise current
Tight 8-pin DIL package
Large area of the photosensitive element

The photodiodes are designed for use in spectrometry and photometry to measure low-intensity light parameters. Structurally the module is made in rectangular package with 8 electrical pins for mounting in a card and with the glass window. The module consists of the Ge photodiode, the microcooler and thermal resistor to set a mode of temperature stabilization.

Specifications

Model	Operating wavelength, nm	Sensitivity, A/W	Photosensitive area diameter, mm	Dark current, µA(*)	Photodiode capacitance, pF
FDG-500ST	400 - 1500	0.9 ... 1.0	500	< 0.05	< 20
FDG-1000ST			1000	< 0.2	< 80
FDG-3600ST			3600	< 2.5	< 1000
FDG-5000ST			5000	< 5	< 2000

Note: (*) @ Upd = 5 V, T = +5°C

Time of going into mode, s	1.5
Operating voltage, V	5
Temperature gradient, °C	50
TE cooler current, µA	300
Thermoresistor resistance, kOhm	3 ... 30
Operating temperature range, °C	- 40 ... +50
Time between failures, h	50,000

LFDG Germanium Avalanche Photodiodes

The LFDG-70 and LFDG-150 Ge avalanche photodiodes are designed for use in photoreceivers for various purposes as highly sensitive fast-response light sensors within 0.5 ... 1.6 µm. In main characteristics Ge avalanche photodiodes are superior to pin photodiodes based on III-V semiconductor compounds.

Applications:

Laser ranging and location
Fiberoptic data transmission systems
Spectrometry
Metrology

Composition of series:

LFDG-70B, LFDG-150B	Packageless avalanche photodiodes on glass-ceramic substrate
LFDG-70BP, LFDG-150BP	Pairs of packageless avalanche photodiodes on separate glass-ceramic substrate matched according to thermal avalanche voltage drift
LFDG-70A, LFDG-150A	TO-18 packaged avalanche photodiodes
LFDG-70AP, LFDG-150AP	Pairs of TO-18 packaged avalanche photodiodes matched according to thermal avalanche voltage drift
LFDG-70VP, LFDG-150VP	TO-5 packaged avalanche photodiodes with built-in stabilitron
LFDG-150AS	TO-18 packaged avalanche photodiode with stabilitron on a single chip

Specifications

Parameters	LFDG-70	LFDG-150	Note:
Sensitive area diameter, µm	70	150
Sensitivity, A/W	18...25	9...12	@1.06 µm and a noise current spectral density of 5 x 10-12 A/Hz1/2
Sensitivity, A/W	25 ... 35	13 ... 17	@1.3...1.55 µm and a noise current spectral density of 5 x 10-12 A/Hz1/2
Multiplied dark current, nA	10...15	25...35	Extrapolated to M=1
Capacity, pF	0.35...0.70	0.8...2.0	Depends on a design
Operating voltage, V	30...42
Stabilitron current, mA	1.0...1.5	2.0...3.0	Only for photodiodes with the index "P"
Operating spectral range, µm	0.5...1.6
Operating temperature range, °C	-60...+60
Time between failures, h	No less 50,000

LFDG-70ST

Features:

High sensitivity at 1300 and 1500 nm
Low noise current
Fast response
Stability of avalanche multiplication factor
Single-mode or multimode fiber for radiation input
Eight 8-pin DIL package

The module is designed for use in long-haul fiberoptic data transmission systems with high data rates and in optical reflectometers. Structurally the module is made in rectangular package with 8 electrical pins for mounting in a card and with fiberoptic cable input. The module consists of the Ge avalanche photodiode, the microcooler and thermoresistor to set a mode of temperature stabilization.

Wavelength, µm	0.6 ...1.6
Operating frequency, MHz	0 ... 1000
Sensitivity @1.3 µm and a noise current spectral density of 5 x 10-12 A/Hz1/2, A/W	36 ... 46
Sensitivity @1.55 µm and a noise current spectral density of 5 x 10-12 A/Hz1/2, A/W	32 ... 40
Operating voltage, V	30 ... 45
Thermoresistor resistance, kOhm	3 ... 30
Operating temperature range, °C	-40 ... +55
TE cooler current, mA	300
Time between failures, h	No less 50,000
Photodiode capacitance at operating voltage, pF	0.6 ... 1.0
Time of going into mode, s	1.5

FPM Photoreceiving Analog Modules for Fiberoptic Communications

The FPM-series analog photoreceiving modules are designed for use in analog and digital fiberoptic data transmission systems with rates to 622 Mbps as pulse optical/electrical converters. The modules have an optical input with multimode (50/125 µm) or single-mode (9/125 µm) fiberoptic cable with the optical connector of LIST-X, FC, ST or without it. The highly sensitive InGaAsP and Ge pin-photodiodes (FPM-XXXM) as well as the germanium avalanche photodiodes with the circuit for thermostabilization of avalanche multiplication factor (FPM-XXX2M) are used in photoreceiving modules.

Features:

High sensitivity at 1300 and 1500 nm
Wide operating temperature range
High dynamic range by input power
Analog output

Specifications

Parameters	Model
Parameters	FPM-34M/LM	FPM-155M/LM	FPM-622M/LM
Data receiving rate, Mbps	034	0155	0622
Sensitivity, dBm (*)	- 42 / - 55	- 40 / - 53	-36 / -50
Dynamic range, dB	30 / 40 (**)	30 / 40 (**)	20 / 30 (**)
Operating spectral range, µm	0.7 1.55
Operating temperature range, °C	- 40 +55
Time between failures, h	No less 30,000

Notes: (*) @ 1.3 µm and SNR = 1
(**) with external control of APD bias

FPM Photoreceiving Digital Modules for Fiberoptic Communications

Features:

High sensitivity at 1300 and 1550 nm
Operates with balanced codes of the Manchester-2 type
High dynamic range by input power

The FPM-series digital photoreceiving modules are designed for use in digital fiberoptic data transmission systems for codes of CMI type as optical pulse-electrical pulse converters. The modules have an optical input with multimode (50/125 µm) or single-mode (9/125 µm) fiberoptic cable with the optical connector of LIST-X, FC, ST or without it. The highly sensitive InGaAsP and Ge pin-photodiodes (FPM-XXXTsM) as well as the germanium avalanche photodiodes with the circuit for thermal stabilization of avalanche multiplication factor (FPM-XXXTsL) are used in photoreceiving.

Specifications

Model	Data receiving rate, Mbps	Sensitivity, dBm (*)	Output signal levels	Supply voltage, V
FPM-34TsM/TsLM	034	- 32/-42	TTL	+5/+5, +45
FPM-155TsM/TsLM	100155	- 30/-40	PECL
FPM-622TsM/TsLM	300622	- 25/-35	PECL
FPM-2Ts/TsL	0.52	- 46/-54	TTL	+5,-5/+5,-5, +45
FPM-8Ts/TsL	18	- 42/-50	TTL	+45
FPM-34Ts/TsL	234	- 34/-42	TTL	+45

Notes: (*) @ 1.3 µm and BER = 10^-9

Operating spectral range, µm	0.7 1.55
Operating temperature range, °C	- 40 +55 (- 25+55 for FPM-XXTs/TsL)
Time between failures, h	No less 30,000

FPM-2/2L34/34L Photoreceiving Analog Modules

Features:

High sensitivity at 1300 and 1550 nm
Operates with all code types
High dynamic range by input power
Analog output
Built-in circuit for thermal stabilization of photodiode multiplication (for FPM with avalanche photodiode)

The FPM-2/2L34/34L series analog photoreceiving modules are designed for use in analog and digital fiberoptic data transmission systems with frequencies up to 30 MHz as optical signal/electrical signal converters. The modules have an optical input with multimode (50/125 µm) or single-mode (9/125 µm) fiberoptic cable with the optical connector of LIST-X or FC-types.

Specifications

Model	Data receiving rate, Mbps	Sensitivity, dBm (*)	Conversion ratio(l = 1.3 µm),V/W	Supply voltage
FPM-2/2L	0.52	- 56/-68	3.6 10+5 / 5.6 10+6	+5,-5/+5,-5, +45
FPM-8/8L	18	- 54/-64	1.2 10+5 / 1.2 10+6
FPM-34/34L	234	- 45/-53	1.2 10+4 / 8 10+4

Notes: (*) @ U signal / U noise =1 and l = 1.3 µm

Operating spectral range, µm	0.7 1.55
Dynamic range, dBm	2240
Operating temperature range, °C	- 40 +55
Current consumption, mA	No more 30, 20, 2 (for FPM with avalanche photodiode)
Time between failures, h	No less 30,000

FPU Photoreceiving Optoelectronic Modules

The FPU series receiving optoelectronic modules are assembled on the basis of high-quality Si avalanche photodiodes and designed for use in digital fiberoptic data transmission systems with frequencies up to 2 MHz as optical signal - electrical signal converters. The modules have an optical input with the optical connector of LIST-X type. The FPU-17A has an analog output and the FPU-17Ts has a digital output of the TTL standard. The FPU module can be completed with high-voltage transformers to supply the avalanche photodiode with standard voltage.

Features:

High sensitivity at 850 nm
Operates with all code types
Optimized for 2 Mbps
High dynamic range by input power
Analog or digital output
Built-in circuit for thermal stabilization of photodiode multiplication

Specifications

FPU-17Ts	2240	0.6 - 0.9	-78-80	0.1 - 2	(4.0 - 4.8) 10+7	+5,-5,+300
Model	Dynamic range, dB	Wave-length, µm	Sensitivity, dBm (*)	Operating frequency, MHz	Conversion ratio (**), V/W	Supply voltage, V
FPU-17A	2240	0.6 - 0.9	-78-80	0.1 - 2	(4.0 - 4.8) 10+7	+5,-5,+300

Notes: (*) @ U signal / U noise =1 and l = 0.85 µm;
(**) @ l = 0.85 µm

Operating temperature range, °C	- 25 +55
Current consumption, mA	No more 30, 20, 0.1
Time between failures, h	No less 30,000

FP Fast-response Photodiode Sensors

The FP-series fast-response photodiode sensors are designed to measure and control parameters of optical pulses and super high-frequency analog signals in the visible and near infrared range. High-quality germanium pin and avalanche photodiodes are used as photosensitive elements of the sensors. They are made by mesa-technology on the basis of original epitaxial structures. The sensors contain the microwave signal-matched circuits providing connection of an external bias voltage and 50 Ohm-input measuring equipment.

Applications:

Spectroscopy
Metrology
Fiberoptics

Composition of series

FP-70A, FP-150A	Modules with Ge pin photodiode and plane input window
FP-70S, FP-150S	Modules with Ge pin photodiode and a piece of fiberoptic cable
FPL-70A, FPL-150A	Modules with Ge avalanche photodiode and plane input window
FPL-70S, FPL-150S	Modules with Ge avalanche photodiode and a piece of fiberoptic cable
FPLS-70A, FPLS-150A	Modules with Ge avalanche photodiode with built-in circuit for thermal stabilization of photocurrent avalanche multiplication factor and plane input window
FPLS-70S, FPLS-150S	Modules with Ge avalanche photodiode with built-in circuit for thermal stabilization of photocurrent avalanche multiplication factor and a piece of fiberoptic cable

Specifications

Model	Sensitive area diameter, µm	Transient characteristic steepness, ps	Sensitivity for 1.3 µm, A/W	Maximum constant power of received radiation, mW	Operating voltage, V
FP-70	70	70	0.8	10	810
FP-150	150	150	0.8	10	810
FPL-70	70	70	26 (*)	3	3040
FPL-150	150	150	20 (**)	3	3040
FPLS-70	70	70	26 (*)	0.1	45
FPLS-150	150	150	20 (**)	0.1	45

Notes: (*) @ Inoise = 5 10 -12 A/Hz1/2;
(**) @ Inoise = 5 10 -11 A/Hz1/2

Spectral range of sensitivity, µm	0.4 - 1.6
Overall dimensions, mm	40 x 40 x 11

3 Vvedensky St., Moscow, 117342, Russia
tel:+7 095 3330389 fax:+7 095 3330256
e-mail: mail@polyus.msk.ru

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